YJJ G12180-010A Fotodiodo PIN di indio gallio arsenico

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March 20, 2025
Category Connection: Sensore fotoelettrico infrarosso
Brief: Discover the YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode, designed for high-performance optical sensing with low noise and dark current. Ideal for applications requiring sensitivity in the 0.9 to 1.7 μm wavelength range.
Related Product Features:
  • Low noise and low dark current for precise optical detection.
  • Low junction capacitance enhances signal clarity.
  • Receiving surface diameter of φ1mm for focused light capture.
  • Uncooled heat dissipation ensures reliable operation.
  • Sensitivity wavelength range from 0.9 to 1.7 μm.
  • Peak sensitivity at 1.55 μm for optimal performance.
  • High photosensitivity of 1.1 A/W for efficient light conversion.
  • Cut-off frequency of 60 MHz supports high-speed applications.
Domande frequenti:
  • What is the sensitivity wavelength range of the YJJ G12180-010A Photodiode?
    The sensitivity wavelength range is from 0.9 to 1.7 μm, making it suitable for various optical sensing applications.
  • What is the typical photosensitivity of this photodiode?
    The typical photosensitivity is 1.1 A/W, ensuring efficient conversion of light into electrical signals.
  • Does the YJJ G12180-010A Photodiode require cooling?
    No, it features uncooled heat dissipation, providing reliable performance without additional cooling systems.